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Presentations


2016 Presentations:

"Effect of alloy and dopant scattering in In1-xGaxAs nanowires", Pedram Razavi, J. Greer, Euro-TMCS II, Cork, Ireland, 7-9 December 2016.
"Elastic properties of semiconductors beyond the limit of infinitesimal strain", Daniel Tanner, Miguel A. Caro, Stefan Schulz, Eoin P. O’ Reilly, Euro-TMCS II, Cork, Ireland, 7-9 December 2016.
Invited Tutorial: "Multiscale simulation of electronic and optoelectronic devices", Fabio Sacconi, M. Auf der Maur, A. Di Carlo, A. Pecchia, Euro-TMCS II, Cork, Ireland, 7-9 December 2016.
"Effects of strain distribution on the emission properties of (In,Ga)N/GaN nanowire LEDs", Fabio Sacconi, F. Panetta, Mattia Musolino, Abbes Tahraoui, Lutz Geelhaar, Euro-TMCS II, Cork, Ireland, 7-9 December 2016.
"Performance Predictions of Single-layer In-V double-gate n- and p-type Feld-effect Transistors", H. Carrillo-Nuñez, C. Stieger, M. Luisier and A. Schenk, Proceedings of the IEDM 2016, San Francisco, CA, USA, 3-7 December 2016.
Invited Talk: "First-principles Simulations of 2-D Semiconductor Devices: Mobility, I-V Characteristics, and Contact Resistance", M. Luisier, A. Szabo, C. Stieger, C. Klinkert, S. Brück, A. Jain, and L. Novotny, Proceedings of the IEDM 2016, San Francisco, CA, USA, 3-7 December 2016.
"Polar and nonpolar InGaN quantum wells: Influence of random alloy fluctuations on the electronic and optical properties", Stefan Schulz, Miguel A. Caro, Daniel Tanner, Eoin P. O’Reilly, Danny Sutherland, Matt Davies, Phil Dawson, Fabrice Oehler, James T Griffiths, Fengzai Tang, Menno Kappers, Colin Humphreys, Rachel Oliver, Material Research Society Meeting 2015, Boston, MA, USA, 29 November -2 December 2016.
Contributed Talk: "Electronic and optical properties of polar InxGa1-xN/GaN quantum wells: Influence of indium content, random alloy and well width fluctuations", Daniel P Tanner, Miguel A. Caro, Eoin P O'Reilly, Stefan Schulz, Material Research Society Meeting 2016, Boston, MA, USA, 29 November -2 December 2016.
"A multiscale open source software environment for the simulation of electronic and optoelectronic devices", Fabio Sacconi, Stefano Bellocchio, Research Agorà, Projects Dissemination area at the International CAE conference, Parma, Italy, 17-18 October 2016.
"Localization of Individual Electrons and Holes in Submonolayer InN Quantum Sheets Embedded in GaN", Felix Feix, International Workshop on Nitride Semiconductors, Orlando, FL, USA, 2-7 October 2016.
Invited Talk: "Electronic and optical properties of c- and m-plane InGaN quantum wells: Influence of structural inhomogeneities and random alloy fluctuations", S. Schulz, R. A. Oliver, C. J. Humphreys, P. Dawson, International  Workshop on Nitride Semiconductors 2016, Orlando, FL, USA, 2-7 October 2016.
"Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs", H. Carrillo-Nuñez, R. Rhyner, M. Luisier, and A. Schenk, Proceedings of the ESSDERC 2016, Lausanne, Switzerland, 12-15 September 2016.
Invited Talk: "Atomistic simulation of nanodevices", M. Luisier, R. Rhyner, A. Szabo, and A. Pedersen, Proceedings of the SISPAD conference, Nürnberg, Germany, 5-8 September 2016.
"TiberCAD and DEEPEN: tools for multiscale simulation of nanostructured devices", Fabio Sacconi, CECAM workshop: Multiscale Simulation: from Materials through to Industrial Usage, Dublin, Ireland, 5-7 September 2016.
"Electron Transport in Mesoscopic Systems: TiMeS transport under UNICORE", Pedram Razavi, Jim Greer, CECAM workshop: Multiscale Simulation: from Materials through to Industrial Usage, Dublin, Ireland, 5-7 September 2016.
"Multiscale modelling of c-plane InGaN/GaN quantum wells: effect of random alloy fluctuations and structural inhomogeneities on the electronic properties", Daniel Tanner, S. Schulz, M. A. Caro, E. P. O'Reilly, CECAM workshop: Multiscale Simulation: from Materials through to Industrial Usage, Dublin, Ireland, 5-7 September 2016.
"DEEPEN: interoperability for multiscale and multiphysics modeling of nanostructured devices", Fabio Sacconi, Stefano Bellocchio, CECAM workshop: Multiscale Simulation: from Materials through to Industrial Usage, Dublin, Ireland, 5-7 September 2016.
Contributed Talk: "Atomistic calculations of the electronic and optical properties of site controlled InGaAs/GaAs quantum dots grown on (111)-oriented GaAs substrates", R. Benchamekh, S. Schulz and E. P. O’Reilly, UK Semiconductors 2016, University of Sheffield, Sheffield, UK, 6-7 July 2016.
"Electronic and optical properties of polar & m-plane InGaN/GaN quantum wells: Influence of indium content, random alloy and well width fluctuations", Stefan Schulz, Technical  University Berlin, Berlin, Germany, 15 June 2016.
"Carrier localization effects in wurtzite InGaN and InAlN systems: Impact of random alloy fluctuations and structural inhomogeneities", Stefan Schulz, University of Paderborn, Paderborn, Germany, 8 June 2016.
Plenary Talk: "Infrastructure Underpinning Advanced Nanoelectronics Design and Emerging Devices", Jim Greer, INC 12, Leuven, Belgium, 10-12 May 2016.
"HDF File-based interoperability for multiscale modelling", Fabio Sacconi, Second International Workshop of Software Solutions for Integrated Computational Materials Engineering (ICME), Barcelona, Spain, 12-15 April 2016.
"Charge carrier localization in submonolayer InN/GaN superlattices", F. Feix, T. Flissikowski, C. Chèze, R. Calarco, H. T. Grahn, and O. Brandt, Spring Meeting of the Condensed Matter Section of the Deutsche Physikalische Gesellschaft, Regensburg, Germany, 6-11 March 2016.
"Random alloy fluctuations in AlInN and InGaN alloys and heterostructures: Consequences for electronic and optical properties fluctuation", Stefan Schulz, Aalto University, Espoo, Finland, 18 February 2016.

 

2015 Presentations:

Contributed Talk: "Phonon-limited performance of single-layer, single-gate black phosphorous n- and p-type field-effect transistors", A. Szabo, R. Rhyner and M. Luisier, Proceedings of the IEDM 2015, Washington, D.C., USA, December 2015.
Contributed Talk: "Pushing back the limit of Ab-initio quantum transport simulations on hybrid supercomputers", M. Calderara, S. Brück, A. Pedersen, M. H. Bani-Hashemian, J. VandeVondele, and M. Luisier, Proceedings of the Super-computing Conference (SC15), Austin, TX, USA, 15 November 2015.
"In-depth physical description of the current conduction in light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles", Mattia Musolino, D. van Treech, M. Meneghini, C. De Santi, E. Zanoni, A. Tahraoui, L. Geelhaar, and H. Riechert, Nanowires Workshop, Barcelona, Spain, 26-30 October 2015.
Invited Talk: "Exploring the 2-D transition metal dichalcogenide design space through ab-initio device simulation", Mathieu Luisier, R. Rhyner and A. Szabo, Beyond CMOS Workshop at IMEC, Leuven, Belgium, October 2015.
Invited Talk: "Nanowire growth as a means for the monolithic integration of III-V compound semiconductors on Si", Lutz Geelhaar, International Conference on Solid State Devices and Materials, Sapporo, Japan, 27-30 September 2015.
Invited Talk: "Impact of random composition fluctuations on electron and hole states in AlInN and InGaN alloys", Stefan Schulz, 15th International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, 7-11 September 2015.
Contribued Talk: "Influence of atomistic effects on device behavior in nitride-based nanostructures", Eoin O'Reilly, Daniel Tanner, Miguel Caro and Stefan Schulz, Psi-K Conference, San Sebastian, Spain, 6-10 September 2015.
"Compositional dependence of the electronic, structural and mechanical properties in strained InGaAs ternary alloys: large-scale atomistic calculations", Petr Khomyakov, Mathieu Luisier, and Andreas Schenk, Psi-K Conference, San Sebastian, Spain, 6-10 September 2015.
Contributed Talk: "Impact of random alloy fluctuations on the excited electron and hole states in InGaN/GaN quantum wells", Stefan Schulz, Conor Coughlan, Miguel A. Caro, Daniel P. Tanner, and Eoin P. O’Reilly, 11th International Conference on Nitride Semiconductors, Beijing, China, 30 August- 4 September 2015.
Contributed Talk: "Effects of local composition fluctuations in nitrides: Piezoelectric and electronic properties", Miguel A. Caro, Stefan Schulz, Siyuan Zhang, Tomi Laurila, and Eoin P. O’Reilly, 28th International Conference on Defects in Semiconductors, Espoo, Finland, 27-31 July 2015.
"First principles modelling of defects in Al2O3 passivated InGaAs", Gabriel Greene and J.C. Greer, IEEE Nano 2015, Rome, Italy, 27-30 July 2015.
"Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes", Fabio Sacconi, IEEE Nano 2015, Rome, Italy, 27-30 July 2015.
Contributed Talk: "Impact of random alloy fluctuations on the electronic properties of polar InGaN wells", Daniel P. Tanner, Stefan Schulz, Conor Coughlan, Miguel A. Caro and Eoin P. O’Reilly, UK Semiconductors, Sheffield, UK, 1-2 July 2015.
"Large-scale atomstic first-principles calculations of the electronic structure of strained InGaAs compounds", Petr Khomyakov, Mathieu Luisier, and Andreas Schenk, CECAM Workshop, Bremen, Germany, July 2015.
Contributed Talk: "Database development and validation for modelling of III-N electronic and photonic devices", Eoin P. O’Reilly, Jim C. Greer, Stefan Schulz and Miguel A. Caro, The 3rd Workshop of European Multi-scale Modelling Cluster, Jyväskyla, Finland,  28-29 May 2015.
Contributed Talk: "HDF File-based interoperability for multiscale and multiphysics modeling", Fabio Sacconi and Stefano Bellocchio, The 3rd Workshop of European Multi-scale Modelling Cluster, Jyväskyla, Finland, 28-29 May 2015.
Contributed Talk: "Compositional dependence of the electronic, structural and mechanical properties in strained InGaAs ternary alloys: large-scale atomistic calculations", Petr Khomyakov, Mathieu Luisier, and Andreas Schenk, IntOP2015 Workshop, Jyväskyla, Finland, 28-29 May 2015.
"Origin of the long wavelength emission of (In,Ga)N nanowires with low In content", Felix Feix, Pierre Corfdir, Jonas Lähnemann, Jumpei Kamimura, Oliver Brandt, and Lutz Geelhaar, WE-Heraeus-Seminar on III-V Nanowire Photonics, Bad Honnef, Germany, 22-25 March 2015.
Invited Talk: "Electro-Thermal Simulations of Nanoelectronic devices", M. Luisier and R. Rhyner, MINOS Workshop, Grenoble, France, 25 March 2015.
Invited Talk: "Impact of alloy fluctuation effects on the optoelectronic properties of InAlN and InGaN materials and devices", Eoin P. O’Reilly, Stefan Schulz and Miguel A. Caro, SPIE Photonics West OPTO 2015, San Francisco, USA, 7-12 February 2015.
"Analysis of the temperature-dependent current-voltage characteristics of light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles", M. Musolino, M. Meneghini, L. Scarparo, C. de Santi, A. Tahraoui, L. Geelhaar, E. Zanoni, and H. Riechert, SPIE Photonics West 2015, San Francisco, USA, 7-12 February 2015.
Invited Talk: "Predicting the performance of nano-electronic devices: computational materials to the rescue?", M. Luisier, R. Rhyner, S. Brück, M. Calderara, A. Szabo, and A. Pedersen, Spring Meeting of the Swiss Association of Computational Chemistry, Zurich, Switzerland, February 2015.

 

2014 Presentations:

Keynote: "Atomistic Simulations of Nanoelectronic Devices", M. Luisier, R. Rhyner, and A. Szabo, Workshop on Simulation and Modeling of Emerging Devices (SMEE), Hong Kong, China, December 2014.
"Ab-initio Simulations of MoS2 Transistors: from Mobility Calculation to Device Performance Evaluation", A. Szabo, R. Rhyner, and M. Luisier, Proceedings of the IEDM 2014, pp. 30.4.1-30.4.4, San Francisco, USA, December 2014.
Invited Talk: "Electro-thermal simulations of nanoelectronic devices", M. Luisier, A. Szabo, and R. Rhyner, CECAM Workshop on High performance models for charge transport in large-scale materials systems, Bremen, Germany, 6-10 October 2014.
"Multiscale Models for III-N Heterostructures", E. O‘Reilly, M. Caro, and S. Schulz, Material Science Engineering (MSE) 2014, Darmstadt, Germany, 23-25 September 2014.
"A Multiscale Open Source Software Environment for the simulation of electronic and optoelectronic devices", Fabio Sacconi, Material Science Engineering (MSE) 2014, Darmstadt, Germany, 23-25 September 2014. 
"Multiscale Modeling of Electron Transport in Semiconductor Nanostructures", C. Stieger, A. Szabo, P. Khomyakov, and M. Luisier, Materials Science Engineering (MSE 2014), Darmstadt, Germany, 23-25 September 2014.
Contributed Talk: "Significant improvement of the device characteristics of light-emitting diodes based on GaN nanowires", Mattia Musolino, E-MRS Spring Meeting, 26-29 August, 2014. 
Invited Talk: "Carrier localization in InGaN and AlGaN", Stefan Schulz, International Workshop on Nitride Semiconductors, Wroclaw, Poland, 24-29 August 2014.
"Atomistic simulation of random alloy fluctuations in InGaN/GaN nanowires", Fabio Sacconi, International Workshop on Computational Electronics (IWCE) 2014, Paris, France, 5 June 2014.
"Atomistic simulation of Next Generation Nanoelectronic Devices", M. Luisier, A. Szabo, R. Rhyner, Seminar at Samsung, Milpitas, CA, USA, May 2014.
"Atomistic simulation of Next Generation Nanoelectronic Devices", M. Luisier, A. Szabo, R. Rhyner, Seminar at Intel, Santa Clara, CA, USA, May 2014.
"Quantum Transport Simulation of Next Generation Nanoelectronic Devices", M. Luisier, A. Ziegler, R. Rhyner, Seminar at Synopsys, Mountain View, CA, USA, May 2014.
Invited Tutorial: "Multiscale Simulation – from DFT to full device modelling", Eoin O’Reilly, TMCS IV Theory, Modelling and Computational Methods for Semiconductors, Salford, UK, 22 January 2014.